Semiconductor device structures and methods for manufacturing the same

ABSTRACT

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a semiconductor device structure, and in particular to a semiconductor device structure including a stiffener.

2. Description of the Related Art

As the technology of semiconductor device structures has progressed, heat dissipation has become increasingly important. A heat dissipating element is attached to a die through a thermal interface material (TIM) for increasing an area of heat dissipation. After multiple heating and cooling operations during manufacturing a semiconductor device structure, the substrate is liable to warp but the heat dissipating element is not, which makes the TIMs have different thickness at different positions. Thicker TIMs will degrade the performance of heat dissipation, and thus degrade the performance of the semiconductor device structure.

SUMMARY

In some embodiments, a semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.

In some embodiments, a semiconductor device structure includes a substrate, a stiffener and a heat dissipating element. The stiffener is disposed on the substrate. The stiffener has a first upper surface, a second upper surface and a lateral surface extending from the first upper surface to the second upper surface. The heat dissipating element is disposed on the stiffener. The heat dissipating element is disposed against the first upper surface and the second upper surface of the stiffener.

In some embodiments, a method for manufacturing a semiconductor device structure includes: providing a substrate; and disposing a stiffener on an upper surface of the substrate. The stiffener has a first upper surface, a second upper surface and a lateral surface extending from the first surface to the second surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second surface of the stiffener and the upper surface of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are readily understood from the following detailed description when read with the accompanying figures. It is noted that various structures may not be drawn to scale, and dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a three-dimensional view of a stiffener according to some embodiments of the present disclosure.

FIG. 2 illustrates a three-dimensional view of a stiffener according to some embodiments of the present disclosure.

FIG. 3 illustrates a top view of a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 4 illustrates a cross-sectional view of the semiconductor device structure along line A-A′ of FIG. 3.

FIG. 5 illustrates a cross-sectional view of a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 6 illustrates a cross-sectional view of a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 7 illustrates a cross-sectional view of a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 8 illustrates a top view of a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 9 illustrates a cross-sectional view of the semiconductor device structure along line B-B′ of FIG. 8.

FIG. 10 illustrates a cross-sectional view of the semiconductor device structure along line C-C′ of FIG. 8.

FIG. 11A illustrates one or more stages of an example of a method for manufacturing a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 11B illustrates one or more stages of an example of a method for manufacturing a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 11C illustrates one or more stages of an example of a method for manufacturing a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 11D illustrates one or more stages of an example of a method for manufacturing a semiconductor device structure according to some embodiments of the present disclosure.

FIG. 11E illustrates one or more stages of an example of a method for manufacturing a semiconductor device structure according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar components. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to explain certain aspects of the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed or disposed in direct contact, and may also include embodiments in which additional features may be formed or disposed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

FIG. 1 illustrates a three-dimensional view of a stiffener 20 a according to some embodiments of the present disclosure. The stiffener 20 a may be configured to support a heat dissipating element. The stiffener 20 a may also be configured to dissipate heat generated by an electronic component(s). The stiffener 20 a may include thermal conductive material, such as metal, metal alloy or other suitable materials. In some embodiments, the stiffener 20 a may have a ring shape from a top view. In some embodiments, the stiffener 20 a may include a polygonal (e.g., trianglar, rectangular, etc), circular or other suitable profile and has an opening in its center.

The stiffener 20 a may have a first portion 21 and a second portion 22. In some embodiments, the first portion 21 may have a shape of a rectangle ring. The second portion 22 may be disposed on the first portion 21. In some embodiments, the second portion 22 and the first portion 21 may be formed in one-piece. That is, there is no boundary between the second portion 22 and the first portion 21. The stiffener 20 a is monolithic. In some other embodiments, the second portion 22 and the first portion 21 may be formed separately. That is, there is a boundary between the first portion 21 and the second portion 22. In this embodiment, the second portion 22 may be attached to the first portion 21 by an adhesive.

In some embodiments, the stiffener 20 a may include an upper surface 20 u 1, an upper surface 20 u 2, a lateral surface 20 s 1 and a lateral surface 20 s 2. The upper surface 20 u 2 may be located over the upper surface 20 u 1. The upper surface 20 u 2 may be substantially parallel to the upper surface 20 u 1. The lateral surface 20 s 1 may extend from the upper surface 20 u 2 to the upper surface 20 u 1. The lateral surface 20 s 2 may extend from the upper surface 20 u 1 to a lower surface opposing to the upper surface 20 u 1. In some embodiments, the lateral surface 20 s 1 may be oblique with respect to the upper surface 20 u 1 and/or the upper surface 20 u 2. The lateral surface 20 s 2 may be substantially perpendicular to the upper surface 20 u 1 and/or the upper surface 20 u 2.

FIG. 2 illustrates a three-dimensional view of a stiffener 20 b according to some embodiments of the present disclosure. The stiffener 20 b may have a structure that is the same as or similar to the stiffener 20 a except that the stiffener 20 b may further include a third portion 23.

In some embodiments, the third portion 23 may be located at a corner of the rectangle ring defined by the first portion 21. In some embodiments, the third portion 23 may extend laterally from the first portion 21. More specifically, the third portion 23 may extend from the lateral surface 20 s 2 of the stiffener 20 b. In some embodiments, the third portion 23 may protrude inwardly from the lateral surface 20 s 2 of the stiffener 20 b. Although FIG. 2 illustrates there are four third portions 23 located at four corners of the first portion 21, the number of third portions 23 may be modified. In other some embodiments, there are two third portions 23 located at two corners along a diagonal line of the rectangle ring defined by the first portion 21.

FIG. 3 illustrates a top view of a semiconductor device structure 1 a according to some embodiments of the present disclosure. In some embodiments, the semiconductor device structure 1 a may include a substrate 10, a stiffener 20 c and an electronic component 30. The stiffener 20 c may be disposed on the substrate 10. The electronic component 30 may be disposed on the substrate 10. The stiffener 20 c may surround the electronic component 30.

FIG. 4 illustrates a cross-sectional view of the semiconductor device structure 1 a along line A-A′.

In some embodiments, the substrate 10 is formed of, for example, a printed circuit board (PCB), such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass-fiber-based copper foil laminate. The substrate 10 may include redistribution layer(s) (RDL), trace(s), via(s) and/or pad(s), for electrical connection between components or between the upper surface and the lower surface of the substrate 10. In some embodiments, the substrate 10 can be replaced with other suitable carriers, such as a lead frame. The substrate 10 may have an upper surface 10 u on which the stiffener 20 c is disposed.

The stiffener 20 c may have a structure that is the same as or similar to that of the stiffener 20 a. In some embodiments, the stiffener 20 c and the substrate 10 may define a space for accommodating one or more electronic components 30. The first portion 21 may be disposed on the substrate 10. In some embodiments, the first portion 21 is non-tapered. In some embodiments, the second portion 22 is tapered. More specifically, the second portion 22 may be tapered far from the substrate 10. The second portion 22 may be tapered toward the upper surface 20 u 2. In some embodiments, the lateral surface 20 s 1 and the upper surface 20 u 2 may be defined by the second portion 22. The upper surface 20 u 1 and the lateral surface 20 s 2 may be defined by the first portion 21. More specifically, the upper surface 20 u 1 may be defined as a surface of the first portion 21 that is exposed from the second portion 22. In some embodiments, the upper surface 20 u 1 may extend from the lateral surface 20 s 1 toward the electronic component 30. The upper surface 20 u 1 is adjacent to the electronic component 30, and the upper surface 20 u 2 is far from the electronic component 30. There is a distance D1 between the upper surface 20 u 1 of the stiffener 20 c and the upper surface 10 u of the substrate 10. There is a distance D2 between the upper surface 20 u 2 of the stiffener 20 c and the upper surface 10 u of the substrate 10. In some embodiments, the distance D1 is less the distance D2.

In some embodiments, the angle θ1 constituted by the upper surface 20 u 1 and the lateral surface 20 s 1 ranges from about 90° to about 115° and can be, for example, 90°, 92°, 95°, 100°, 105°, 100° or 115°. In some embodiments, the angle θ2 constituted by the upper surface 20 u 2 and the lateral surface 20 s 1 ranges from about 90° to about 115° and can be, for example, 90°, 92°, 95°, 100°, 105°, 100° or 115°.

The electronic component 30 may be disposed on the upper surface 10 u of the substrate 10. The electronic component 30 may be disposed in a space defined by the substrate 10 and the stiffener 20 c. The electronic component 30 may include one or more semiconductor dies in the form of one or more integrated circuits (ICs) (such as packaged semiconductor dies). In some embodiments, the electronic component 30 may include, but is not limited to, at least one active component such as MEMS die or another active component. In some embodiments, the electronic component 30 may include, but is not limited to, at least one passive component such as a capacitor, a resistor, or another passive component.

The electronic component 30 may have an upper surface 30 u. There is a distance D3 between the upper surface 30 u of the electronic component 30 and the upper surface 10 u of the substrate 10. In some embodiments, the distance D1 is greater than the distance D3.

The adhesive 40 may be disposed on the upper surface 10 u of the substrate 10. In some embodiments, the stiffener 20 c may be attached to the substrate 10 by the adhesive 40.

The bump 50 may be disposed on a lower surface 101 of the substrate 10. The bump 50 may be a solder ball (e.g., Sn ball). The bump 50 may be electrically connected to the electronic component 30 though RDL and/or trace(s) in the substrate 10.

FIG. 5 illustrates a cross-sectional view of a semiconductor device structure 1 b according to some embodiments of the present disclosure. The semiconductor device structure 1 b may have a structure similar to or the same as that of the semiconductor device structure 1 a of FIG. 4 except that the semiconductor device structure 1 b further includes a thermal interface material (TIM) 60 and a heat dissipating element 70.

The TIM 60 may be disposed on the electronic component 30. The TIM 60 may be disposed between the electronic component 30 and the heat dissipating element 70. The TIM 60 may be in contact with an upper surface of the electronic component 30 and a lower surface of the heat dissipating element 70. The TIM 60 may be configured to conduct heat, generated from the electronic component 30, to the heat dissipating element 70, thereby decreasing thermal resistance and thus allowing semiconductor device structure 1 b to achieve better performance.

The heat dissipating element 70 may be disposed on the stiffener 20 c. The heat dissipating element 70 may be configured to dissipate heat generated from the electronic component 30. The heat dissipating element 70 may include a thermal conductive material, such as metal, metal alloy or other suitable material. In some embodiments, the heat dissipating element 70 may be in contact with the upper surface 20 u 1, the lateral surface 20 s 1 and the upper surface 20 u 2 of the stiffener 20 c. In some embodiments, the heat dissipating element 70 may be disposed against the upper surface 20 u 1, the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 c. That is, the weight of the heat dissipating element 70 may be borne by the upper surface 20 u 1, the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 c. More specifically, the heat dissipating element 70 may be supported by the upper surface 20 u 1, the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 c.

In some embodiments, the semiconductor device structure 1 b may further include a filler 80. The filler 80 may be disposed on the substrate 10. The filler 80 may be filled into a space defined by the substrate 10, the stiffener 20 c, the electronic component 30 and the heat dissipating element 70. In some embodiments, the filler 80 may be a polymeric material. In some embodiments, the filler 80 is non-conductive polymeric material.

In this embodiment, the heat dissipating element 70 may be disposed against three surfaces of the stiffener 20 c. The stiffener 20 c may provide more contact points for heat dissipating element 70 and the contact surface between the stiffener 20 c and the heat dissipating element 70 is thus increased. Therefore, the heat dissipating element 70 may impose more pressure on the stiffener 20 c which may enhance the adhesion between the stiffener 20 c and the substrate 10, thereby reducing warpage of the substrate 10 and preventing from the separation of the stiffener 20 c and the substrate 10 due to the warpage of the substrate 10. In a comparative semiconductor device structure, the heat dissipating element is disposed against the stiffener by one surface or point, which makes the substrate liable to warp or separate from the stiffener. In comparison with the comparative semiconductor device structure, the warpage of the substrate 10 of the semiconductor device structure 1 a may be reduced from about 350 μm to about 200 μm. Therefore, the TIMs 60 may have a relatively uniform thickness even if they are located at different position, such as at a central portion of the semiconductor device structure or at a peripheral portion of the semiconductor device structure. As a result, the performance of the semiconductor device structure 1 a may be improved.

FIG. 6 illustrates a cross-sectional view of a semiconductor device structure 1 c according to some embodiments of the present disclosure. The semiconductor device structure 1 c may have a structure similar to or the same as that of the semiconductor device structure 1 b of FIG. 5 except that the semiconductor device structure 1 c includes a stiffener 20 d replacing the stiffener 20 c.

In some embodiments, the second portion 22 is non-tapered. That is, the lateral surface 20 s 1 may be substantially perpendicular to the upper surface 20 u 2 and/or the upper surface 20 u 1. In this embodiment, the heat dissipating element 70 is disposed against the upper surface 20 u 1 and the upper surface 20 u 2 of the stiffener 20 d. That is, the heat dissipating element 70 is supported by the upper surface 20 u 1 and the upper surface 20 u 2 of the heat dissipating element 70. The weight of the heat dissipating element 70 may be borne by the upper surface 20 u 1 and the upper surface 20 u 2 of the stiffener 20 d. More specifically, the heat dissipating element 70 may be supported by the upper surface 20 u 1 and the upper surface 20 u 2 of the stiffener 20 d.

Similar to the semiconductor device structure 1 b illustrated in FIG. 5, in the semiconductor device structure 1 c as illustrated in FIG. 6, the heat dissipating element 70 may be disposed against at least two surfaces of the stiffener 20 d. The stiffener 20 d may provide more contact points for heat dissipating element 70 and the contact surface between the stiffener 20 d and the heat dissipating element 70 is thus increased. Therefore, the heat dissipating element 70 may impose more pressure on the stiffener 20 d which may enhance the adhesion between the stiffener 20 d and the substrate 10, thereby reducing warpage of the substrate 10 and preventing from the separation of the stiffener 20 d and the substrate 10 due to the warpage of the substrate 10. The TIMs 60 may have a relatively uniform thickness even if they are located at different position, such as at a central portion of the semiconductor device structure or at a peripheral portion of the semiconductor device structure. As a result, the performance of the semiconductor device structure 1 c may be improved.

FIG. 7 illustrates a cross-sectional view of a semiconductor device structure 1 d according to some embodiments of the present disclosure. The semiconductor device structure 1 d may have a structure similar to or the same as that of the semiconductor device structure 1 b of FIG. 5 except that the semiconductor device structure 1 d includes a stiffener 20 e replacing the stiffener 20 c.

In some embodiments, the heat dissipating element 70 may be disposed against the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 e. That is, the weight of the heat dissipating element 70 may be borne by the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 e. More specifically, the heat dissipating element 70 may be supported by the upper surface 20 u 2 and the lateral surface 20 s 1 of the stiffener 20 e.

Similar to the semiconductor device structure 1 b illustrated in FIG. 5, in the semiconductor device structure 1 d as illustrated in FIG. 7, the heat dissipating element 70 may be disposed against at least two surfaces of the stiffener 20 e. The stiffener 20 e may provide more contact points for heat dissipating element 70 and the contact surface between the stiffener 20 e and the heat dissipating element 70 is thus increased. Therefore, the heat dissipating element 70 may impose more pressure on the stiffener 20 e which may enhance the adhesion between the stiffener 20 e and the substrate 10, thereby reducing warpage of the substrate 10 and preventing from the separation of the stiffener 20 e and the substrate 10 due to the warpage of the substrate 10. The TIMs 60 may have a relatively uniform thickness even if they are located at different position, such as at a central portion of the semiconductor device structure or at a peripheral portion of the semiconductor device structure. As a result, the performance of the semiconductor device structure 1 d may be improved.

In some embodiments, the upper surface 20 u 1 of the stiffener 20 e is not in contact with the heat dissipating element 70. The heat dissipating element 70 is spaced from the upper surface 20 u 1 of the stiffener 20 e. In some embodiments, an adhesive may be disposed on the upper surface 20 u 1 of the stiffener 20 e and in contact with the heat dissipating element 70. In some other embodiments, a filler may be disposed on the upper surface 20 u 1 of the stiffener 20 e and in contact with the heat dissipating element 70. The heat dissipating element 70 may put weight on the stiffener 20 e through the additive or the filler. In some embodiments, the distance D1 is less than or equal to the distance D3. In this embodiment, the TIM 60 of the semiconductor device structure 1 d may be thinner, thereby further reducing thermal resistance of the semiconductor device structure 1 d.

FIG. 8 illustrates a top view of a semiconductor device structure 1 e according to some embodiments of the present disclosure. The semiconductor device structure 1 e may have a structure similar to or the same as that of the semiconductor device structure 1 a of FIG. 3 except that the semiconductor device structure 1 e includes a stiffener 20 f replacing the stiffener 20 c.

The stiffener 20 f may have a structure similar to or the same as that of the stiffener 20 c. The stiffener 20 f may include the third portion 23 that extends from the first portion 21 inwardly toward the electronic component 30. The stiffener 20 f may have an inner surface 20 i and an outer surface 20 o. The outer surface 20 o may surround the inner surface 20 i. There is a length W1 between the outer surface 20 o and the inner surface 20 i corresponding to a region where the third portion 23 is not formed. There is a length W2 between the outer surface 20 o and the inner surface 20 i corresponding to a region where the third portion 23 is formed. In some embodiments, the length W1 is different from the length W2. In some embodiments, the length W1 is less than the length W2.

FIG. 9 illustrates a cross-sectional view of the semiconductor device structure 1 e along line B-B′. In this cross-section, the semiconductor device structure 1 e may have the same structure as that of the semiconductor device structure 1 b depicted in FIG. 5. The stiffener 20 f may have the length W1 between two lateral surfaces of the stiffener 20 f. The length W1 may be measured along a lower surface of the stiffener 20 f.

FIG. 10 illustrates a cross-sectional view of the semiconductor device structure 1 e along line C-C′. The stiffener 20 f may have the length W2 between two lateral surfaces of the stiffener 20 f The length W2 may be measured along a lower surface of the stiffener 20 f. In some embodiments, the third portion 23 may be disposed between the electronic component 30 and the first portion 21. In some embodiments, the upper surface 20 u 1 may be defined by the first portion 21 and the third portion 23. In some embodiments, the upper surface of the third portion 23 may be coplanar with that of the first portion 21. The heat dissipating element 70 may be in contact with the third portion 23.

In this embodiment, the space where no electronic component 30 is disposed can be used to dispose the third portion 23. Since there is greater contact area between the stiffener 20 f and the heat dissipating element 70, the warpage of the substrate 10 may be further reduced. Moreover, heat can be much more easily dissipated by the stiffener 20 f.

FIG. 11A, FIG. 11B, FIG. 11C, FIG. 11D and FIG. 11E illustrate one or more stages of an example of a method for manufacturing a semiconductor device structure 1 a according to some embodiments of the present disclosure.

Referring to FIG. 11A, a substrate 10 is provided. The substrate 10 may include a PCB or a lead frame.

Referring to FIG. 11B, one or more electronic components 30 may be disposed on the upper surface 10 u of the substrate 10. In some embodiments, the electronic component 30 may electrically connect to the substrate 10.

Referring to FIG. 11C, an adhesive 40 may be coated on the upper surface 10 u of the substrate 10.

Referring to FIG. 11D, a stiffener 20 c, including a first portion 21 and a second portion 22, may be disposed on the upper surface 10 u of the substrate 10 through the adhesive 40. The first portion 21 may be non-tapered. The second portion 22 may be tapered. The stiffener 20 c may have an upper surface 20 u 1, an upper surface 20 u 2 and a lateral surface 20 s 1 extending from the upper surface 20 u 1 to the upper surface 20 u 2. The distance between the upper surface 20 u 1 of the stiffener 20 c and the upper surface 10 u of the substrate 10 is less than the distance between the upper surface 20 u 2 of the stiffener 20 c and the upper surface 10 u of the substrate 10.

In some embodiments, the first portion 21 and the second portion 22 may be formed in one-piece. In some embodiments, the first portion 21 and the second portion 22 may be formed separately. In this embodiment, the first portion 21 may be attached to the substrate 10, and then the second portion 22 may be attached to the first portion 21 through an adhesive. Alternatively, the first portion 21 and the second portion 22 may be integrated to form the stiffener 20 c first, and then the whole stiffener 20 c may be attached to the substrate 10.

In some embodiments, a heat dissipating element (not shown) may be disposed on the stiffener 20 c and in contact with the stiffener 20 c and the electronic components 30. Specifically, the heat dissipating element may be in contact with the upper surface 20 u 1, the lateral surface 20 s 1 and the upper surface 20 u 2 of the stiffener 20 c, and the heat dissipating element may be in contact with an upper surface of the electronic component 30 via a TIM.

Referring to FIG. 11E, multiple bumps 50 may be formed on the lower surface 101 of the substrate 10, and the semiconductor device structure 1 a is produced.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,” “down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,” “lower,” “upper,” “over,” “under,” and so forth, are indicated with respect to the orientation shown in the figures unless otherwise specified. It should be understood that the spatial descriptions used herein are for purposes of illustration only, and that practical implementations of the structures described herein can be spatially arranged in any orientation or manner, provided that the merits of embodiments of this disclosure are not deviated from by such an arrangement.

As used herein, the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, a first numerical value can be deemed to be “substantially” the same or equal to a second numerical value if the first numerical value is within a range of variation of less than or equal to ±10% of the second numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%.

Two surfaces can be deemed to be coplanar or substantially coplanar if a displacement between the two surfaces is no greater than 5 μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm. A surface can be deemed to be substantially flat if a displacement between a highest point and a lowest point of the surface is no greater than 5 μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the singular terms “a,” “an,” and “the” may include plural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and “electrical conductivity” refer to an ability to transport an electric current. Electrically conductive materials typically indicate those materials that exhibit little or no opposition to the flow of an electric current. One measure of electrical conductivity is Siemens per meter (S/m). Typically, an electrically conductive material is one having a conductivity greater than approximately 10⁴ S/m, such as at least 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations are not limiting. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not be necessarily drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus due to manufacturing processes and tolerances. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it will be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure. 

1. A semiconductor device structure, comprising: a substrate having an upper surface; a die disposed on the upper surface of the substrate; and a stiffener disposed on the upper surface of the substrate and surrounds the die, wherein the stiffener comprises a first portion, a second portion on the first portion and a third portion extending from a lateral surface of the first portion toward the die, and the third portion has a lateral surface substantially perpendicular to the lateral surface of the first portion.
 2. The semiconductor device structure of claim 1, wherein the stiffener has a first upper surface adjacent to the die, a second upper surface farther from the die than the first upper surface, and a lateral surface extending from the first upper surface to the second upper surface, and an angle constituted by the first upper surface and the lateral surface of the stiffener ranges from about 90° to about 115°.
 3. The semiconductor device structure of claim 1, wherein the stiffener has a first upper surface adjacent to the die, a second upper surface farther from the die than the first upper surface, and a lateral surface extending from the first upper surface to the second upper surface, and the lateral surface of the stiffener is substantially perpendicular to the first upper surface of the stiffener.
 4. The semiconductor device structure of claim 1, wherein the stiffener has a first upper surface adjacent to the die, a second upper surface farther from the die than the first upper surface, and a lateral surface extending from the first upper surface to the second upper surface, and an angle constituted by the second upper surface of the stiffener and the lateral surface of the stiffener ranges from about 90° to about 115°.
 5. The semiconductor device structure of claim 1, wherein the stiffener has a first upper surface adjacent to the die, a second upper surface farther from the die than the first upper surface, and a lateral surface extending from the first upper surface to the second upper surface, and a first distance between the first upper surface of the stiffener and the upper surface of the substrate is greater than a second distance between an upper surface of the die and the upper surface of the substrate.
 6. The semiconductor device structure of claim 1, wherein the stiffener has a first upper surface adjacent to the die, a second upper surface farther from the die than the first upper surface, and a lateral surface extending from the first upper surface to the second upper surface, and a first distance between the first upper surface of the stiffener and the upper surface of the substrate is substantially the same as or less than a second distance between an upper surface of the die and the upper surface of the substrate.
 7. The semiconductor device structure of claim 1, wherein the second portion is tapered.
 8. The semiconductor device structure of claim 1, wherein the first portion and the second portion are formed in one-piece.
 9. The semiconductor device structure of claim 1, wherein a portion of the first portion is exposed from the second portion.
 10. (canceled)
 11. A semiconductor device structure, comprising: a substrate ; a stiffener disposed on the substrate, wherein the stiffener has a first upper surface, a second upper surface and a lateral surface extending from the first upper surface to the second upper surface; and a heat dissipating element disposed on the stiffener, wherein the heat dissipating element is disposed against the first upper surface and the second upper surface of the stiffener, wherein the heat dissipating element has a lateral surface oblique with respect to the first upper surface of the stiffener.
 12. The semiconductor device structure of claim 11, wherein the heat dissipating element is disposed against the lateral surface of the stiffener.
 13. The semiconductor device structure of claim 11, wherein the first upper surface is in contact with the heat dissipating element.
 14. The semiconductor device structure of claim 11, wherein the lateral surface is in contact with the heat dissipating element.
 15. The semiconductor device structure of claim 11, wherein the stiffener and the substrate defines a space for accommodating one or more electronic components.
 16. The semiconductor device structure of claim 15, further comprising: a die disposed on the substrate and within the space defined by the stiffener and the substrate; and a thermal interface material disposed between the heat dissipating element and the die.
 17. The semiconductor device structure of claim 11, wherein the stiffener comprises a first portion and a second portion on the first portion, wherein the first portion is ring-shaped.
 18. The semiconductor device structure of claim 17, wherein the stiffener further comprises a third portion protruding inwardly from a lateral surface of the first portion.
 19. A method for manufacturing a semiconductor device structure, comprising: providing a substrate; disposing a stiffener on an upper surface of the substrate, wherein the stiffener comprises a first portion, a second portion on the first portion and a third portion extending from a lateral surface of the first portion, and the third portion has a lateral surface substantially perpendicular to the lateral surface of the first portion.
 20. The method of claim 19, further comprising: disposing a die on the substrate, wherein the die is surrounded by the stiffener.
 21. The semiconductor device structure of claim 11, wherein the heat dissipating element is formed in one-piece. 